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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Charge pumping and low-frequency noise in MOS structures
TL;DR: In this article, a gold-doped n-channel MOS transistor was observed to have a small-signal charge pumping current, low-level diode forward current, and excess noise peak at the same value of surface potential.
Journal ArticleDOI
Advanced front-end processes for the 45 nm CMOS technology node
E.J.H. Collart,Susan Felch,Houda Graoui,D Kirkwood,S. Tallavarjula,J. A. van den Berg,J. J. Hamilton,Nick E. B. Cowern,Karen J. Kirkby +8 more
TL;DR: In this paper, a 1 × 1015 cm−2, 5 −keV antimony (Sb) implant under solid phase epitaxial regrowth conditions can meet the 45 −nm node requirements.
Journal ArticleDOI
Removal of metallic impurities in metallurgical grade silicon by directional solidification
TL;DR: In this article, a multicrystalline silicon ingot of w 130 × 120 mm, with characteristics of large and well directional columnar crystals, is obtained by Bridgman directional solidification (DS).
Journal ArticleDOI
As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor
Journal ArticleDOI
P–N junction capacitance†
TL;DR: The voltage intercept of the inverse capacitance squared versus voltage curve, for reverse and slight forward bias, has been measured for a variety of alloyed p-n junction diodes made in two ways as discussed by the authors.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.