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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl).
Ahmad Mostafa,Mamoun Medraj +1 more
TL;DR: Theoretical understanding of phase diagrams is bridged with the research and development of solar-grade silicon production, relying on the available information in the literature and the own analysis.
Journal ArticleDOI
Critical Assessment of the Impurity Diffusivities in Solid and Liquid Silicon
TL;DR: In this paper, the diffusion of impurities in solid and liquid silicon is critically reviewed and assessed using the least-squares analysis and semi-empirical correlations, and assessed diffusivities have been applied to simulate the impurity diffusion profiles and the denuded zone in the intrinsic gettering annealing.
Journal ArticleDOI
The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes
Journal ArticleDOI
A review of hydrometallurgy techniques for the removal of impurities from metallurgical-grade silicon
Fengshuo Xi,Fengshuo Xi,Shaoyuan Li,Shaoyuan Li,Wenhui Ma,Zhengjie Chen,Kuixian Wei,Jijun Wu +7 more
TL;DR: In this paper, a review of hydrometallurgy techniques for the removal of impurities from metallurgical-grade silicon (MG-Si) is presented, and the results of these combination methods are classified and summarized.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.