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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Avalanche breakdown in silicon diffused junctions
TL;DR: In this paper, the authors derived the breakdown voltage for a diffused junction of the erfc type, where XT is total depletion-layer thickness in cm and VB is breakdown voltage in volts.
Journal ArticleDOI
Thermodynamics of solid silicon equilibrated with Si–Al–Cu liquid alloys
Takeshi Yoshikawa,Kazuki Morita +1 more
TL;DR: In this article, the activity coefficient of copper in solid silicon at infinite dilution relative to the pure solid state was determined as follows R T ln γ Cu ( s ) in solid Si 0 = 166, 000 ( ± 3500 ) − 47.6 ( ± 2.8 ) T ( J / mol ) ( 975 − 1602 K )
Journal ArticleDOI
Fabrication of Reproducible, Integration‐Compatible Hybrid Molecular/Si Electronics
Xi Yu,Robert Lovrincic,Olga Kraynis,Gabriel Man,Tal Ely,Arava Zohar,Tal Toledano,David Cahen,Ayelet Vilan +8 more
TL;DR: The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics.
Journal ArticleDOI
Production of extreme-purity aluminum and silicon by fractional crystallization processing
TL;DR: In this paper, a large scale fractional crystallization is used commercially at Alcoa to produce extreme purity aluminum (99.999+% Al) and silicon (30% silicon).
Journal ArticleDOI
Molecular beam epitaxy of silicon: Effects of heavy Sb doping
TL;DR: In this article, the authors studied the effect of heavy Sb doping on the performance of undoped and antimony-doped Si films and found that the layer quality is drastically degraded with respect to defects, mobility and lateral doping profile.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.