Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
A Tunable Beamforming Ferroelectric Lens for Millimeter Wavelength Ranges
TL;DR: In this article, a millimeter-wave quasi-optical beamforming device (QOBD) based on the ferroelectric ceramic was elaborated and considered, which allows operating in a wide frequency range up to 100 GHz.
Dissertation
Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs
TL;DR: The transistor en couches minces (TFT) as mentioned in this paper is one of the most widely used electronico-complementary semiconductor devices for support-soup fabrication.
DissertationDOI
Fast and slow charge trapping and transport in organic semicondutors
TL;DR: In this article, the authors investigated slow charge traps in organic field effect transistor (OFET) which limit the device performance and showed that transient measurements are an important part to identify and distinguish concurrent processes.
Journal ArticleDOI
Impact of surface morphologies of substrates on the epitaxial growth of magnetron-sputtered (ZnO) x (InN) 1-x films
Ryota Narishige,Kentaro Kaneshima,Daisuke Yamashita,Kunihiro Kamataki,Kazunori Koga,Masaharu Shiratani,Naho Itagaki +6 more
TL;DR: In this article, the authors defined a figure of merit (FOM) of sputter-deposited (ZnO)x(InN)1-x (called "ZION" hereinafter) films as a reciprocal of a product of full width at half maximum of x-ray rocking curves and root-mean-square (RMS) roughness.
Journal ArticleDOI
26-2: 5.8” Ultra-Narrow Border LCD with Soluble Metal-Oxide TFTs and Integrated with GIP Circuit
Yu-Hsien Chena,Shin-Chuan Chianga,Der-Chun Wua,Kuo-Hsing Tsenga,Yi-Hsien Lina,Hsi-Ming Changa,Yen-Yu Huanga,Duy-Vu Phamb,Kuo-Hui Sub,Marko Marinkovicb,Dennis Weberb,Alexey Merkulovb,Ralf Anselmannb +12 more
TL;DR: In this paper, the first solution based metal-oxide semiconductor is successfully implemented in TFT-LCD production line, where the well-known slot-die coating technology is used to deposit liquid phase semiconductor on Gen4 substrates.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.