Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Interior-architectured ZnO nanostructure for enhanced electrical conductivity via stepwise fabrication process
Eugene Chong,Sarah Kim,Jun-Hyuk Choi,Dae-Geun Choi,Joo-Yun Jung,Jun-Ho Jeong,Eung-Sug Lee,Jaewhan Lee,Inkyu Park,Jihye Lee +9 more
TL;DR: Interior-architecturing of sol-gel-based ZnO nanostructure for the enhanced electrical conductivity was reported and it was shown that filling structural voids in ZnNO nanolines with nanocrystalline ZNO contributed to reducing electrical resistivity.
Journal ArticleDOI
Laser-assisted patterning of solution-processed oxide semiconductor thin film using a metal absorption layer
TL;DR: In this paper, a method to pattern solution-processed oxide semiconductor thin films by all-laser process was presented, where a metal thin film is first photoetched by a spatially-modulated pulsed Nd-YAG laser beam and this layer is then covered with a semiconductor film.
Journal ArticleDOI
Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator
TL;DR: In this paper, the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator was reported.
Journal ArticleDOI
Transparent thin-film transistor with self-assembled nanocrystals
TL;DR: In this article, the authors presented the fabrication of transparent devices using nanofabrication and nanomaterials, where clear and functional structures can be constructed over a large area with highly transparent nanocrystals via layer-by-layer self-assembly.
Journal ArticleDOI
Highly sensitive and selective H2O2 sensors based on ZnO TFT using PBNCs/Pt-NPs/TNTAs as gate electrode
TL;DR: In this article, a highly sensitive and selective H2O2 sensor with high sensitivity and selectivity has been proposed for water quality monitoring, quality control of food products, and so on.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.