Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Ethanol Sensor Based on Dip Coated ZnO Thick Films
Journal ArticleDOI
The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.
TL;DR: Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample growing on the a-planeside substrate.
Journal ArticleDOI
In situ application of polyelectrolytes in zinc oxide nanorod synthesis: Understanding the effects on the structural and optical characteristics
Vignesh Suresh,Sundaramurthy Jayaraman,Muhammad Iskhandar bin Muhamad Jailani,M.P. Srinivasan +3 more
TL;DR: A facile and simple means of synthesizing a macroscopic array of ZnO nanorods with high feature densities using a modified hydrothermal approach that involves the in situ introduction of polyelectrolyte and structural and elemental analysis emphasize the fact that the intentional introduction of PEI results in a nanorod with better surface quality as evidenced by photoluminescence spectra.
Journal ArticleDOI
Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering
TL;DR: In this paper, the InZnO:N thin-film transistors were fabricated on SiO2/p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature.
Dissertation
Semi-conducteurs 2D pour l’électronique flexible : évaluation du potentiel du MoS2 monocouche en tant que matériau de canal
TL;DR: In this paper, a semi-conducteur d'epaisseur nanometrique is evaluated for the disulfure de molybdene (MoS2) monocouche.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.