Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Nanoscale Writing of Transparent Conducting Oxide Features with a Focused Ion Beam
Journal ArticleDOI
Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies
R. Siddheswaran,J. Savková,Rostislav Medlín,Jan Očenášek,Ondřej Životský,Petr Novák,Pavol Šutta +6 more
TL;DR: In this article, Ni-doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400°C by reactive magnetron sputtering using a mixture of Ar and O 2 gases.
Journal ArticleDOI
Surface treatment to improve responsivity of MgZnO UV detectors
Yajun Zhao,Yajun Zhao,Dayong Jiang,Dayong Jiang,Rusheng Liu,Rusheng Liu,Qian Duan,Qian Duan,Chunguang Tian,Chunguang Tian,Long Sun,Long Sun,Shang Gao,Shang Gao,Jieming Qin,Jieming Qin,Qingcheng Liang,Qingcheng Liang,Jianxun Zhao,Jianxun Zhao +19 more
TL;DR: In this article, a planar geometry metal-semiconductor-metal (MSM) structured ultraviolet (UV) detectors were fabricated on quartz substrates by radio frequency (RF) magnetron sputtering technique with a combinatorial target.
Book ChapterDOI
Transparent Amorphous Oxide Semiconductors for Flexible Electronics
TL;DR: Transparent amorphous oxide semiconductors have large electron mobility comparable to that in the corresponding crystalline materials and conductivity is continuously controllable from the almost insulating state to the degenerate state as mentioned in this paper.
Journal ArticleDOI
SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS
Bestoon Anwer Gozeh,Abdulkerim Karabulut,Mudhaffer Mustafa Ameen,Abdulkadir Yildiz,Fahrettin Yakuphanoğlu +4 more
TL;DR: In this paper, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol-gel technique to synthesize the photodevice.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.