Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Patent
High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays
Chongwu Zhou,Po-Chiang Chen +1 more
TL;DR: In this paper, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle catalysts on a Si/SiO 2 substrate using a laser ablation process.
Journal ArticleDOI
Krypton ion implantation effect on selenium nanowires
Suresh Panchal,Rishi Pal Chauhan +1 more
TL;DR: In this article, the effect of krypton ion implantation on selenium nanowires was investigated based on structural, electrical, and optical properties of the nanowire.
Journal ArticleDOI
Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications
Longyan Yuan,Guojia Fang,Xiao Zou,Huihui Huang,Hai Zou,Xiangyun Han,Yihua Gao,Sheng Xu,Xingzhong Zhao +8 more
TL;DR: In this article, high-k Ba0.6Sr0.4TiO3 was used as dielectric layer and an α-InGaZnO thin-film transistor was demonstrated with a saturation mobility of 5.8 cm2 V−1 s−1 and on/off ratio of 2 × 105.
Journal ArticleDOI
Lifetime Modeling of ZnO Thin-Film Transistors
TL;DR: In this article, a novel method of predicting the lifetime of polycrystalline metal-oxide thin-film transistors (TFTs) is presented, where measured thresholdvoltage shift is correlated to the creation of defect (trap) states within the semiconductor grain boundaries.
Journal ArticleDOI
Flexible-detachable dual-output sensors of fluid temperature and dynamics based on structural design of thermoelectric materials
TL;DR: In this paper, a flexible-detachable dual-output fluid sensors employing the structural design of thermoelectric materials (SDTMs) that are artificially patterned TMs are presented.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.