Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors
TL;DR: In this article, a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics is presented.
Journal ArticleDOI
Morphology-, synthesis- and doping-independent tuning of ZnO work function using phenylphosphonates.
TL;DR: The work function of ZnO is modified by two types of dipole-bearing phenylphosphonate layers, yielding a maximum WF span of 1.2 eV, and the molecular modification is found to be invariant to supra-bandgap illumination, which indicates that the substrate's space charge-induced built-in potential is unlikely to be the reason for the WF difference.
Journal ArticleDOI
Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles
TL;DR: In this paper, a solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process, and a highly transparent solution was fabricated by spin coating without vacuum deposition, and then ultra-short-pulsed laser annealing was performed to change the film properties without using a blanket high temperature heating process.
Journal ArticleDOI
Characteristics of Thin-Film Transistors Fabricated on Fluorinated Zinc Oxide
TL;DR: In this article, the authors investigated the dependence of the extent of the improvement on the amount of fluorine, precisely controlled using ion implantation, and found that at a fluorine concentration of 1020/cm3, transistors with a relatively high field effect mobility of ~60 cm2/V·s have been realized.
Journal ArticleDOI
ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film
TL;DR: In this article, a ZnO thin-film transistor with a channel layer formed via aqueous solution-growth at low temperature is demonstrated, which has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with channel mobility as large as 0.56 cm2.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.