Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films
Spilios Dellis,Nikolaos Kalfagiannis,S. Kassavetis,C. Bazioti,G. P. Dimitrakopulos,Demosthenes C. Koutsogeorgis,Panos Patsalas +6 more
TL;DR: In this article, a post-fabrication laser annealing process was used to enhance the ultra-violet emission of ZnO using an Al thin interlayer film between the Si substrate and ZnOs thin film.
Journal ArticleDOI
Optical-reconfigurable carbon nanotube and indium-tin-oxide complementary thin-film transistor logic gates
TL;DR: A hybrid integration of p-channel carbon nanotube (CNT) and n-channel junctionless indium-tin-oxide (ITO) TFTs using a simple and cost-effective shadow mask-assisted fabrication process suggests that introducing optical-modulation to the logic gates could increase the functionalities compared with the traditional electrically driven counterparts.
Journal ArticleDOI
Phase transitions of room temperature RF-sputtered ZnO/Mg0.4Zn0.6O multilayer thin films after thermal annealing
TL;DR: In this article, the authors report the thermal stability of room-temperature RF-sputtered Mg 0.4 Zn 0.6 O thin films and ZnO/Mg
Journal ArticleDOI
Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
Min Ching Chu,Jagan Singh Meena,Po-Tsun Liu,Han-Ping D. Shieh,Hsin-Chiang You,Yen Wei Tu,Feng-Chih Chang,Fu-Hsiang Ko +7 more
TL;DR: In this article, a change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques.
Journal ArticleDOI
Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics
TL;DR: In this article, a low-temperature fabrication of ZnO thin-film transistors on high-k gate dielectrics was reported. But the performance of the fabricated transistors showed high on/off ratio larger than 10 5 and low subthreshold voltage swing.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.