Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Patent
Transparent nanowire transistors and methods for fabricating same
TL;DR: In this article, the authors describe fully transparent nanowire transistors having high field effect mobilities, including one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate.
Journal ArticleDOI
Water induced zinc oxide thin film formation and its transistor performance
TL;DR: In this article, the effect of water on the formation of a zinc oxide (ZnO) thin film and the performance of a ZnO thin film transistor (TFT) was investigated.
Journal ArticleDOI
ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.
TL;DR: It is demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior of the memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO.
Journal ArticleDOI
Influence of time, light and temperature on the electrical properties of zinc oxide TFTs
Pedro Barquinha,Elvira Fortunato,António Pereira Gonçalves,Ana Pimentel,A. Marques,Luís Pereira,Rodrigo Martins +6 more
TL;DR: In this paper, the influence of some of the most important external factors on the electrical properties of transparent thin-film transistors (TFTs), using zinc oxide produced at room temperature as the semiconductor material, was investigated.
Journal ArticleDOI
The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
Hyun-Suk Kim,Kyung Bae Park,Kyoung Seok Son,Joon Seok Park,Wan-Joo Maeng,Tae Sang Kim,Kwang Hee Lee,Eok Su Kim,Jiyoul Lee,Joonki Suh,Jong Baek Seon,Myung Kwan Ryu,Sang Yoon Lee,Kimoon Lee,Seongil Im +14 more
TL;DR: In this paper, the performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied, and the extent of device degradation upon negative bias stress with the presence of visible light was found to be strongly sensitive to the degree of photoelectric effect in the oxide semiconductor.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.