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Journal ArticleDOI

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

P. F. Carcia, +3 more
- 10 Feb 2003 - 
- Vol. 82, Iss: 7, pp 1117-1119
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.
Abstract
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.

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Citations
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Journal ArticleDOI

The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor

TL;DR: In this article, the effects of UV treatment on the device properties of a PE-ALD ZnO thin film transistor (TFT) were investigated, and it was shown that after UV light exposure, the device shows proper TFT modulation by gate voltage.
Journal ArticleDOI

Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases

TL;DR: In this paper, a method has been developed to tune the electronic property of zinc-oxide thin-film transistors (TFTs) by annealing them in different gases.
Journal ArticleDOI

The dry etching of a sol–gel deposited ZnO thin film in a high density BCl3/Ar plasma

TL;DR: In this article, the etching characteristics of zinc oxide (ZnO) including the etch rate and the selectivity of ZnO in a BCl3/Ar plasma were investigated.
Journal ArticleDOI

ZnO based transparent thin film transistor grown by aerosol assisted CVD

TL;DR: In this article, the authors reported the characterization of n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system.
Journal ArticleDOI

Investigation of atomic-layer-deposited Al-doped ZnO film for AZO/ZnO double-stacked active layer thin-film transistor application

TL;DR: In this article, Al-doped zinc oxide (AZO) thin films with different Al concentrations fabricated by atomic layer deposition are investigated to determine the Al doping effect for AZO/ZnO double-stacked active layer transistor (TFT) applications.
References
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Book

Elements of X-ray diffraction

TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.
Book

Thermodynamics of solids

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