Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Effect of Co-doping level on physical properties of ZnO thin films
TL;DR: In this article, pure and Co doped ZnO thin films have been deposited onto glass substrate at different levels of Co-doping and optical spectroscopy (linear and nonlinear) techniques have been used to investigate all films.
Journal ArticleDOI
Swift heavy ion induced optical and structural modifications in RF sputtered nanocrystalline ZnO thin film
TL;DR: In this article, the nanocrystalline ZnO thin films were grown using radio frequency magnetron sputtering and irradiated at fluences of 3.5 × 1012, 1.1 × 1013 and 3.3 × 1014 cm2.
Journal ArticleDOI
Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact
TL;DR: In this article, the electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements, and the results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased.
Journal ArticleDOI
Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate
TL;DR: In this paper, high mobility ZnO thin film transistors (TFTs) (1.5 Zn 1.0 Nb 1.5 O 7 (BZN) composite gate insulator on a glass substrate was reported.
Journal ArticleDOI
Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin‐film transistors
Shijie Wang,T I Wong,T I Wong,Qiang Chen,Ming Yang,Lai Mun Wong,J.W. Chai,Zheng Zhang,Jisheng Pan,Yuan Ping Feng +9 more
TL;DR: In this paper, the authors report the studies of atomic and electronic structures at ZnO and ZrO 2 interface using high-resolution transmission electron microscopy (TEM).
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.