Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
More filters
Journal ArticleDOI
Modeling and simulation of polycrystalline ZnO thin-film transistors
Faruque M. Hossain,J. Nishii,S. Takagi,Akira Ohtomo,Tomoteru Fukumura,Hiroshi Fujioka,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +8 more
TL;DR: In this article, the authors modeled grain boundaries in polycrystalline ZnO TFTs and performed simulation of the device by using a two-dimensional device simulator in order to determine the grain boundary effects on device performance.
Journal ArticleDOI
Investigating the stability of zinc oxide thin film transistors
R. B. M. Cross,M.M. De Souza +1 more
TL;DR: In this article, the stability of thin film transistors incorporating sputtered ZnO as the channel layer is investigated under gate bias stress, while negative stress results in a negative shift.
Journal ArticleDOI
Black Phosphorus Radio-Frequency Transistors
Han Wang,Xiaomu Wang,Fengnian Xia,Luhao Wang,Hao Jiang,Qiangfei Xia,Matthew L. Chin,Madan Dubey,Shu-Jen Han +8 more
TL;DR: BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus can be considered as a promising candidate for the future high performance thin film electronics technology for operation in the multi-GHz frequency range and beyond.
Journal ArticleDOI
Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells
Xinsheng Liu,Jie Chen,Miao Luo,Meiying Leng,Zhe Xia,Ying Zhou,Sikai Qin,Ding-Jiang Xue,Lu Lv,Han Huang,Dongmei Niu,Jiang Tang +11 more
TL;DR: Sb2Se3 solar cells fabricated from thermal evaporation achieves an encouraging 2.1% solar conversion efficiency, and the optical absorption, photosensitivity, and band position of Sb2 Se3 film is studied.
Journal ArticleDOI
Spin-coated zinc oxide transparent transistors
TL;DR: In this paper, a ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated, which exhibits n-channel, enhancement-mode behavior with channel mobility as large as 0.20 cm2 and drain current on-to-off ratio of nearly 107.
References
More filters
Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.