Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
More filters
Journal ArticleDOI
Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy
Kenji Nomura,Hiromichi Ohta,Kazushige Ueda,Toshio Kamiya,Masahiro Orita,Masahiro Hirano,Toshiyuki Suzuki,Chizuru Honjyo,Yuichi Ikuhara,Hideo Hosono +9 more
TL;DR: In this paper, the growth mechanism for a single-crystalline film of InGaO3(ZnO)5 (IGZO) on a (111)-oriented yttria-stabilized-zirconia substrate by reactive solid phase epitaxy was studied by high-resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy.
Journal ArticleDOI
Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning
Kelly P. Ip,Brent P. Gila,A. H. Onstine,Eric Lambers,Young-Woo Heo,Kwang Hyeon Baik,David P. Norton,Stephen J. Pearton,Suhyun Kim,Jeffrey R. LaRoche,Fan Ren +10 more
TL;DR: In this paper, the Schottky barrier height of e-beam Pt contacts was 0.70eV, with ideality factor of 1.5 and a saturation current density of 6.2×10−6Acm−2.
Journal ArticleDOI
Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors
TL;DR: In this paper, the effects of Li doping on the performance and environmental stability of solution processed zinc oxide (ZnO) thin film transistors (TFTs) were investigated.
Journal ArticleDOI
Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition
TL;DR: In this paper, the conductivity of ALD ZnO films was analyzed with X-ray diffraction, transmission electron microscopy, Xray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopic analysis.
Journal ArticleDOI
Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.
TL;DR: This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications.
References
More filters
Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.