Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy
TL;DR: Fits using the Drude-Smith model show that films have the highest mobility, followed by nanowires and then nanoparticles, and that annealing the ZnO increases its mobility, and implications for electron transport in dye-sensitized solar cells are discussed.
Journal ArticleDOI
Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition
TL;DR: In this article, high-quality transparent conductive gallium-doped ZnO (GZO) thin films were deposited on quartz glass substrates using pulsed laser deposition.
Journal ArticleDOI
Recent advances in ZnO transparent thin film transistors
Elvira Fortunato,Pedro Barquinha,Ana Pimentel,Alexandra Gonçalves,A. Marques,Luís Pereira,Rodrigo Martins +6 more
TL;DR: In this article, the authors present some of the recent results already obtained as well as the ones that are being developed in their laboratory, showing that the combination of high channel mobility and transparency produced at room temperature makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics.
Journal ArticleDOI
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
TL;DR: In this paper, the authors report characteristic of indium gallium zinc oxides (GIZOs) which is strongly associated with the film surface, and they show that at the pressure of 8×10−6Torr, the turn-on voltage dramatically shifts to nearly −47V of the negative gate bias direction.
Journal ArticleDOI
Discovery-based design of transparent conducting oxide films
TL;DR: The properties of TCO materials derive from the nature, number, and atomic arrangements of metal cations in crystalline or amorphous oxide structures, from the resident morphology, and from the presence of intrinsic or intentionally introduced defects.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.