Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
ZnO thin-film transistor grown by rf sputtering using carbon dioxide and substrate bias modulation
TL;DR: In this paper, a bottom-gate ZnO thin-film transistor showed 4.7 cm2/Vsec mobility, 4×106 on/off ratio, and -2 V threshold voltage.
Journal ArticleDOI
Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment
K. Remashan,Yong-Seok Choi,Se-Koo Kang,J.W. Bae,Geun Young Yeom,Seong-Ju Park,Jae-Hyung Jang +6 more
TL;DR: In this article, an as-fabricated N2O-plasma-treated ZnO TFT was shown to exhibit depletion-type device characteristics with a drain current of about 24 µA at zero gate voltage, a turn-on voltage of -24 V, and a threshold voltage (VT) of -4 V.
System Building, Two Ways: Development and Application of ZnO TFT Technology in Large-Area Hybrid Sensing Systems
TL;DR: This work focuses on enabling the construction of robust sensing system infrastructures from the bottom up, starting with development of a deposition system for growth of thin-film metal oxides, and concluding with a new system architecture for highly-scalable large-scale sensing systems and system demonstration.
Journal ArticleDOI
Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
TL;DR: In this paper, the fabrication and characteristics of thin film transistors with ZnO channel layers (ZnO TFTs) having different oxygen contents were reported, and the operation mechanism was defined as the variation of oxygen contents in the channel layer.
Journal ArticleDOI
Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(001) heterostructures
TL;DR: In this paper, the authors reported the bi-epitaxial growth of ZnO and resistance switching characteristics of Pt/ZnO/TiN-based heterojunction devices fabricated on Si(001) substrates by pulsed laser deposition.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.