Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film
TL;DR: In this article, an organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays.
Journal ArticleDOI
Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
TL;DR: In this paper, a transparent indium tin oxide (ITO)/SiO x /ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated, and the average optical transmittance of the structure in the visible region was about 84%.
Journal ArticleDOI
Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films
Mutsumi Kimura,Mamoru Furuta,Yudai Kamada,Takahiro Hiramatsu,Tokiyoshi Matsuda,Hiroshi Furuta,Chaoyang Li,Shizuo Fujita,Takashi Hirao +8 more
TL;DR: Trap densities in the channel layers Dt of ZnO thin-film transistors have been extracted as mentioned in this paper, and the spatial profile of the electric potential is calculated by applying Poisson equation and carrier density equations, and Dt is extracted.
Journal ArticleDOI
Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
Mitsuru Nakata,Kazushige Takechi,Shinya Yamaguchi,Eisuke Tokumitsu,Hirotaka Yamaguchi,Setsuo Kaneko +5 more
TL;DR: In this paper, the authors investigated the dependence of the effects of ELA on IGZO-TFTs in comparison with that of its effects on low-temperature polycrystalline silicon (LTPS) for various film thicknesses.
Journal ArticleDOI
Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
TL;DR: In this article, the effects of ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated, showing that the boundary between the inversion region and the depletion region positively shifts when UV ozone treated.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.