Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Plasmonic ZnO/p-silicon heterojunction solar cell
TL;DR: In this paper, a ZnO/p-Si heterojunction solar cell has been fabricated by sol-gel technique, where silver nanostructures have been deposited on the top surface of the cell by pulsed laser deposition (PLD) system.
Journal ArticleDOI
Flexible metal oxide semiconductor devices made by solution methods
TL;DR: Recent researches conducted on developing low-temperature solution-processed flexible metal oxide semiconductors, from single thin-film transistor (TFT) device to fully integrated circuits and systems, including emerging flexible energy harvesting devices for self-powered systems that integrate displays, sensors, data storage units, and information processing functions are discussed.
Journal ArticleDOI
Characterization of CBD grown ZnO films with high c-axis orientation
TL;DR: In this article, the effects of seed layer and deposition time, structural (e.g., grain size, microstrain and dislocation density), morphological, and electrical properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method.
Journal ArticleDOI
A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability
Lei Lu,Jiapeng Li,Man Wong +2 more
TL;DR: In this article, the effects of different thermal processing on the characteristics of zinc oxide (ZnO) thin-film transistors (TFTs) with either gas-permeable or sealed gate-stack were studied and compared.
Journal ArticleDOI
Boundary-induced effect on the spoke-like activity in E × B plasma
Eduardo Rodriguez,Valentin Skoutnev,Yevgeny Raitses,Andrew Powis,Igor Kaganovich,Andrei Smolyakov +5 more
TL;DR: In this article, a large-scale E×B anomalous cross-field current for dielectric walls reaching 40% to 100% of the discharge current was investigated. But the results showed that the anomalous current is greatly reduced with the conducting boundary (characterized by βeff ∼ 102).
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.