Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Dissertation
Desenvolvimento de óxidos semicondutores tipo-p para aplicação em transístores de filme fino
TL;DR: Dissertacao apresentada in this articlerisa de Mestre em Engenharia Microelectronica e Nanotecnologias, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, Portugal.
Journal ArticleDOI
Low‐Voltage MgZnO Thin Film Transistors with an Amorphous Al2O3 Gate Insulator Grown by Pulsed Laser Deposition
ChangPeng Wang,Dan Tang,Shun Han,Peijiang Cao,Liu Xinke,Zeng Yuxiang,Wenjun Liu,Fang Jia,Wangying Xu,Deliang Zhu,Youming Lu +10 more
Journal ArticleDOI
Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles
TL;DR: In this article, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated, such as electron mobility, on/off ratio, and threshold voltage shift were estimated.
ZnO Nanostructure Synthesis & Laser Direct Writing Process for Optoelectronic Devices
TL;DR: Lee et al. as mentioned in this paper used spin coating and subsequent ultra short-pulsed UV laser annealing to change the ZnO thin film properties and achieved a substantial conductivity increase.
Journal ArticleDOI
Ring Oscillators Based on ZnO Channel JFETs and MESFETs
TL;DR: In this paper, the feasibility of low power oxide based circuits with Schottky diode and bipolar (pn-) diode gates has been shown, which provides significantly lower operation voltages at similar frequencies compared to previously reported oxide thin film transistors based on insulating gates.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.