Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Growth of ZnO Thin Films on C-Plane AL2O3 by Molecular Beam Epitaxy Using Ozone as an Oxygen Source
TL;DR: In this paper, the growth of c-axis oriented ZnO thin films on c-plane Al2O3 via molecular beam epitaxy (MBE) using dilute ozone (O3) as an oxygen source was investigated.
Journal ArticleDOI
Piezotronic Effect on ZnO Nanowire Film Based Temperature Sensor
TL;DR: This study demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing ZnO nanowire (NW) film and presented that the temperature sensing capability of as-fabricated NW film based pieZotronic devices can be tuned by piezopotential, which exhibits dramatically enhanced sensitivity.
Journal ArticleDOI
Structural, electrical, and optical properties of hydrogen-doped ZnO films
A. Kronenberger,Angelika Polity,Detlev M. Hofmann,Bruno K. Meyer,Andre Schleife,Friedhelm Bechstedt +5 more
TL;DR: In this paper, hydrogen doped ZnO thin films were deposited by radio frequency magnetron sputtering from a ceramic target on $c$-plane sapphire and fused silica using H${}_{2}$ and O${}$ as reactive gases.
Journal ArticleDOI
Use of ferroelectric gate insulator for thin film transistors with ITO channel
TL;DR: In this article, it was shown that relatively large ''on'' current can be obtained in ITO/(Bi,La)"4Ti"3O"1"2(BLT) TFTs.
Journal ArticleDOI
Preparation and properties of ZnO and devices
TL;DR: In this article, a discussion of some of the growth issues of ZnO-based epitaxial and heteroepitaxial layers and their use in a variety of devices is presented.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.