Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices
Ana Pimentel,Elvira Fortunato,Alexandra Gonçalves,António Marques,Hugo Águas,Luís Pereira,Isabel M.P.L.V.O. Ferreira,Rodrigo Martins +7 more
TL;DR: In this article, the authors present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, such as ozone gas sensors, ultra-violet detectors and thin film transistors.
Patent
Thin film transistors using thin film semiconductor materials
TL;DR: In this article, the active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.
Book ChapterDOI
Electronic Structure of Transparent Conducting Oxides
J. Robertson,B. Falabretti +1 more
TL;DR: The metal-oxide bond is strong so that the oxides have a combination of a high heat of formation and a wide band gap, compared to any similar compound as discussed by the authors, and the TCOs are heavily used for flat panel displays, photovoltaic cells, low emissivity windows, electrochromic devices, sensors and transparent electronics.
Journal ArticleDOI
Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature
E. Przeździecka,Łukasz Wachnicki,W. Paszkowicz,Elżbieta Łusakowska,Tomasz A. Krajewski,G. Łuka,Elzbieta Guziewicz,Marek Godlewski +7 more
TL;DR: In this paper, the first results of the low-temperature photoluminescence study on polycrystal zinc oxide (ZnO) films obtained by atomic layer deposition at 100 °C, 130 °C and 200 °C were reported.
Journal ArticleDOI
Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications
Sylwia Gieraltowska,Lukasz Wachnicki,Bartlomiej S. Witkowski,Marek Godlewski,Elzbieta Guziewicz +4 more
TL;DR: In this article, a transparent transistor was obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60°C-100°C) using ALD technology.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.