Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Proceedings ArticleDOI
Post annealing temperature effect on photoluminescence spectroscopy of ZnO thin film
TL;DR: In this paper, the effect of annealing temperature on the photoluminescence (PL) properties of ZnO thin film was investigated. But the authors did not consider the effect on the optical, structure and electrical properties.
Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer
TL;DR: In this paper, a simulation and experimental results related to n-ZnO/p-Si SHJSC are presented to fill the gaps in the literature related to NZN and p-Si single homojunction solar cells.
Journal ArticleDOI
Influence of post-deposition annealing on the electrical properties of zinc oxide thin films
TL;DR: In this article, the influence of post-deposition annealing temperature and the use of different ambient gases on the structural and electrical properties of zinc oxide thin films grown by atomic layer deposition was investigated.
Book ChapterDOI
Introduction to Solution - Deposited Inorganic Electronics
TL;DR: Moore's Law as mentioned in this paper has been widely discussed in the electronics research community and has been an engine for worldwide economic growth because it results in faster and more compact products for computing and communications.
Journal ArticleDOI
Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering
W. S. Shih,Sheng-Joue Young,Liang-Wen Ji,Walter Water,Teen-Hang Meen,K.T. Lam,Jyh Sheen,W.C. Chu +7 more
TL;DR: In this paper, the authors demonstrated that nanocrystalline TiO2 thin films were deposited on ITO/glass substrate by radio-frequency magnetron sputtering and showed that the devices exhibited enhancement mode characteristics with the threshold voltage of 7.5 V.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.