Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
12‐3: A 5.5 inch FFS‐LCD Driven by Soluble ‐metal‐oxide and Implementation in Production Line through BCE TFT Structure
Yen-Yi Huang,Shin-Chuan Chiang,Yu-Hsien Chen,Der-Chun Wu,Kuo-Hsing Tseng,Yi-Hsien Lin,Hsi-Ming Chang,Duy-Vu Pham,Kuo-Hui Su,Marko Marinkovic,Dennis Weber,Alexey Merkulov,Ralf Anselmann +12 more
Journal ArticleDOI
Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits
Alexander Lajn,Tobias Diez,Friedrich-Leonhard Schein,Heiko Frenzel,H. von Wenckstern,Marius Grundmann +5 more
TL;DR: In this article, the stability of transparent inverter circuits at temperatures up to 150°C and under illumination by light in the visible spectral range is investigated, and it is shown that visible light does not influence the device operation.
Patent
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
TL;DR: In this article, the active layer is made of polycrystalline zinc oxide (ZnO) to which a group V element is added to prevent the zinc oxide from forming an active layer.
Journal ArticleDOI
Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition
M. Echizen,Shin-ichi Motoyama,Toshiaki Tatsuta,Osamu Tsuji,Ram S. Katiyar,Ashok Kumar,James F. Scott +6 more
TL;DR: In this paper, high-quality ZnO thin films were fabricated on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition.
Journal ArticleDOI
Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation
TL;DR: In this article, transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4−xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as channel were demonstrated.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.