Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Hall and Field‐Effect Mobilities of Electrons Accumulated at a Lattice‐Matched ZnO/ScAlMgO4 Heterointerface
Takao I. Suzuki,Akira Ohtomo,Atsushi Tsukazaki,Futami Sato,Jyunya Nishii,Hideo Ohno,Masashi Kawasaki +6 more
Journal ArticleDOI
Enhancing the thermoelectric performance of ZnO epitaxial films by Ga doping and thermal tuning
TL;DR: In this paper, highly c-axis orientated Ga-doped thin films have been epitaxially deposited at different temperatures, and the surface morphology and roughness have been modified.
Journal ArticleDOI
Room temperature vacuum-induced ligand removal and patterning of ZnO nanoparticles: from semiconducting films towards printed electronics
Thomas V. Richter,Felix Stelzl,Felix Stelzl,Jan Schulz-Gericke,Jan Schulz-Gericke,Benjamin Kerscher,Uli Würfel,Uli Würfel,Michael Niggemann,Michael Niggemann,Sabine Ludwigs +10 more
TL;DR: In this paper, a spin coating of stable nanoparticle dispersions with low boiling point ligands is used to remove them by a vacuum-induced "sintering" process of the particles at room temperature.
Journal ArticleDOI
Monitoring the characteristic properties of Ga-doped ZnO by Raman spectroscopy and atomic scale calculations
Seyda Horzum,Fadil Iyikanat,Ramazan Tuğrul Senger,Cem Çelebi,Mohamed Sbeta,Abdullah Yildiz,Tülay Serin +6 more
TL;DR: In this paper, the structural and vibrational properties of zinc oxide (ZnO) are modified upon Gallium (Ga) doping by using X-ray diffraction (XRD) and Raman scattering measurements.
Journal ArticleDOI
Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates
TL;DR: In this article, the effects of annealing on the optical and the electronics properties of ZnO thin films grown on p-Si(1-0-0) substrates by using radio frequency magnetron sputtering were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and XPS measurements.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.