Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer
Qiang Yao,Dejie Li +1 more
TL;DR: In this paper, a thin-film transistor (TFT) using sputtered ZnO as channel layer is described and its deposition condition is investigated. And Levinson's expression of drain current is applied to the transfer character of the device.
Journal ArticleDOI
Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors
TL;DR: It was found that low temperature solution processed ZnO thin film transistors (TFTs) with PCBA interfacial modification layers exhibited a higher electron mobility and could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZNO TFTs.
Journal ArticleDOI
RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors
M. I. Medina-Montes,H. Arizpe-Chávez,L. A. Baldenegro-Pérez,Manuel Quevedo-Lopez,R. Ramírez-Bon +4 more
TL;DR: In this article, ZnO films were processed by radiofrequency (RF) magnetron sputtering under argon gas environment at room temperature, varying the RF power (90, 100, 150, and 200) on p-Si/SiO2 substrates.
Journal ArticleDOI
Stable n-channel metal-semiconductor field effect transistors on ZnO films deposited using a filtered cathodic vacuum arc
S. Elzwawi,Hyung Suk Kim,M. Lynam,Edwin L. H. Mayes,Dougal G. McCulloch,Martin W. Allen,Jim G. Partridge +6 more
TL;DR: In this paper, the properties of metal-semiconductor field effect transistors (MESFETs) on ZnO films grown using the filtered cathodic vacuum arc (FCVA) technique were reported.
Journal ArticleDOI
Low temperature atomic layer deposited ZnO photo thin film transistors
TL;DR: In this paper, a ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. But the growth temperature of ZnOs was selected as 80, 100, 120, 130, and 250 degrees C. The authors examined the material characteristics of the TFTs using X-ray photoelectron spectroscopy and x-ray diffraction methods.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.