Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
More filters
Journal ArticleDOI
High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening
Amit Bhatia,Geoffroy Hautier,Tan Nilgianskul,Anna Miglio,Jingying Sun,Hyung Joon Kim,Kee Hoon Kim,Shuo Chen,Gian-Marco Rignanese,Xavier Gonze,Jin Suntivich +10 more
TL;DR: In this paper, a bismuth-based double-perovskite oxide with high hole mobility and wide band gap was proposed to solve the problem of finding transparent p-type oxides with a Hall hole mobility above 30 cm$^2$/Vs.
Journal ArticleDOI
Overview of electroceramic materials for oxide semiconductor thin film transistors
TL;DR: In this paper, the authors focus on recent progress in applying electroceramic materials for oxide-semiconductor thin-film transistors, and discuss current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability.
Journal ArticleDOI
Crystalline Size Effects on Texture Coefficient, Electrical and Optical Properties of Sputter-deposited Ga-doped ZnO Thin Films
Yaqin Wang,Wu Tang,Lan Zhang +2 more
TL;DR: In this article, the dependence of crystal structure, electrical, and optical properties of the Ga-doped ZnO (GZO) films on crystalline size were systematically studied.
Journal ArticleDOI
Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films
TL;DR: In this paper, the effects of the Al concentration on the optical properties of zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method.
Journal ArticleDOI
Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene
Hyo-Ki Hong,Junhyeon Jo,Daeyeon Hwang,Jongyeong Lee,Na Yeon Kim,Seungwoo Son,Jung Hwa Kim,Mi-Jin Jin,Young Chul Jun,Rolf Erni,Sang Kyu Kwak,Jung-Woo Yoo,Zonghoon Lee +12 more
TL;DR: An atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial Growth.
References
More filters
Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.