Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Characterization of thin ZnO films by vacuum ultra-violet reflectometry
T. Gumprecht,T. Gumprecht,P. Petrik,Georg Roeder,Martin Schellenberger,Lothar Pfitzner,Beatrix Pollakowski,Burkhard Beckhoff +7 more
TL;DR: In this paper, the capabilities of vacuum ultra-violet (VUV) reflectometry for the characterization of ZnO films of nominally 50 nm, doped by Ga and In.
Patent
Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution
TL;DR: In this article, a method for manufacturing inverted staggered and co-planar TFTs is presented, which emphasizes the use of metal oxides or II-VI compound semiconductors and low temperature CBD process to form the active channel layer.
Proceedings ArticleDOI
Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn(1-x)MgxO (x=15%) thin film
TL;DR: In this paper, the effect of UVOzone (UVO) annealing on RF sputtered ZnMgO thin films was studied. And the as-deposited and UVO treated films were characterized using various optical, structural and elemental characterization techniques.
Journal ArticleDOI
The study on formation mechanism of novel ZnO cone prepared by using pulsed current electrodeposition
TL;DR: In this paper, a possible growth process of homogeneous nucleation and subsequent coalescent growth was proposed as plausible mechanistic interpretation for formation of the novel conical ZnO.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.