Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
ZnO based visible-blind UV photodetector by spray pyrolysis
TL;DR: In this article, the effect of precursor solution concentration on the photoconductive properties of ZnO thin films were studied using different techniques, including X-ray diffraction (XRD) analysis, surface morphology and surface roughness have been studied by AFM analysis.
Journal ArticleDOI
Energy band offsets of dielectrics on InGaZnO4
TL;DR: In this article, the authors provide experimental band offset values for a number of gate dielectrics on Indium-Gallium-Zinc Oxide (IGZO) for TFT backplane technologies.
Journal ArticleDOI
ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay
Jie Sun,Devin A. Mourey,Dalong Zhao,Sung Kyu Park,Shelby F. Nelson,David H. Levy,Diane Carol Freeman,Peter J. Cowdery-Corvan,Lee W. Tutt,Thomas N. Jackson +9 more
TL;DR: In this paper, the authors have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC).
Journal ArticleDOI
High k dielectrics for low temperature electronics
Luís Pereira,Pedro Barquinha,Elvira Fortunato,Rodrigo Martins,Donghun Kang,Chang Jung Kim,Hyuck Lim,Ihun H. Song,Yun-Kwon Park +8 more
TL;DR: In this article, the electrical and structural properties of two high k materials as hafnium oxide (HfO 2 ) and tantalum oxide (Ta 2 O 5 ) produced at room temperature are exploited.
Journal ArticleDOI
Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals
TL;DR: In this article, a solution-processed metal oxide semiconductor thin film transistors (TFTs) were produced using fluorine (F) doped ZnO-based aqueous solution.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.