Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Extremely low temperature growth of ZnO by atomic layer deposition
Elzbieta Guziewicz,I.A. Kowalik,Marek Godlewski,Krzysztof Kopalko,V. Osinniy,A. Wójcik,S. Yatsunenko,Elżbieta Łusakowska,W. Paszkowicz,Marek Guziewicz +9 more
TL;DR: In this article, the zinc oxide (ZnO) thin films obtained by the atomic layer deposition (ALD) method using diethyl zinc and water precursors, which allowed them to lower deposition temperature to below 200°C.
Journal ArticleDOI
Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
Takashi Hirao,Mamoru Furuta,Takahiro Hiramatsu,Tokiyoshi Matsuda,Chaoyang Li,Hiroshi Furuta,Hitoshi Hokari,M. Yoshida,H. Ishii,Masayuki Kakegawa +9 more
TL;DR: In this article, a bottom-gate thin-film transistors (TFTs) with transparent zinc oxide (ZnO) channels have been developed for liquid-crystal display (LCD) with the required pattern accuracy.
Journal ArticleDOI
Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide
TL;DR: In this article, a high performance bottom-gate n-type transparent thin-film transistors are reported, being the discussion primarily focused on the influence of the indium zinc oxide active layer thickness on the properties of the devices.
Journal ArticleDOI
Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors
Si Yun Park,Beom Joon Kim,Kyongjun Kim,Moon Sung Kang,Keon-Hee Lim,Tae Il Lee,J.M. Myoung,Hong Koo Baik,Jeong Ho Cho,Youn Sang Kim +9 more
TL;DR: ) and its dep-osition requires a high-cost vacuum process, and considerable interest has focused on metal oxide semiconductors, such as In, Ga, or Zn oxides, as these exhibit high optical transparencies, and have excel-lent electrical properties with high electron mobility, chemical stability, and solution processability.
Journal ArticleDOI
High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere
Aneeqa Bashir,Paul H. Wöbkenberg,Jeremy Smith,James M. Ball,George Adamopoulos,Donal D. C. Bradley,Thomas D. Anthopoulos +6 more
TL;DR: In this article, the use of a simple deposition technique, namely spray pyrolysis, for the fabrication of highmobility, low-voltage ZnO transistors and simple integrated circuits is demonstrated.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.