Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
P‐8: High Resolution a‐IGZO TFT LCD Panel Fabricated with Lower Annealing Temperature
Shin-Chuan Chiang,Yu-Hsien Chen,Ya-Ju Lu,Der-Chun Wu,Po-Lung Chen,Kuo-Hsing Tseng,Wen-Cheng Lu,Yi-Hsien Lin,Ying-Hui Chen,En-Chih Lid,Chi-Young Wang,Hsi-Ming Chang,Li-Hsin Kang,Yen-Yu Huang +13 more
TL;DR: In this paper, a 3.8 inch WVGA AM-LCD driven by a-IGZO TFTs is successfully demonstrated and the maximum process temperature is as low as 300°C.
Solution-processed inorganic electronics
TL;DR: In this paper, the same authors presented a fully solution-processed cell along with control cells based on evaporated metal contacts for printed RFID tags, which exhibited long retention time, cycling endurance, good memory window, and minimum programming time of 200 ns.
Journal ArticleDOI
Tailored β-diketones as effective surface passivation for solution processed zinc oxide thin film transistors
TL;DR: In this article, passivated diketone passivation of defect states at the surface of solution-processed zinc oxide thin film transistors has been investigated, where trifluoroacetylacetophenone is used as the basis for passivating molecules due to its easy chemical variability on the phenyl ring.
Journal ArticleDOI
Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron sputtering
F. C. Correia,J. M. Ribeiro,Paulo Miguel Babo Cunha Salvador,Alexander Welle,Michael Bruns,Adélio Mendes,Carlos J. Tavares +6 more
TL;DR: In this article, the effect of applied substrate bias and deposition pressure on the bulk composition, electrical and microstructural properties of Gallium-doped Zinc Oxide thin films deposited by DC magnetron sputtering was reported.
Proceedings ArticleDOI
Synthesis of ZnO Microcrystals with Controllable Morphology by Microwave Reaction
Lifei Chen,Huaqing Xie +1 more
TL;DR: In this paper, the effect of reaction temperature, reaction time, and microwave oven power on morphology of ZnO microcrystals has been studied and the scanning electron microscope analysis was employed to determine the morphology of the products.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.