Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
More filters
Journal ArticleDOI
ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes
TL;DR: In this article, undoped ZnO films were deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD), and they showed that the field effect mobility of TFTs with moderate gate leakage was 10 cm2/V s, threshold voltage of 7.5 V, subthreshold slope 104.
Journal ArticleDOI
4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM‐OLED Display
Sang-Hee Ko Park,Chi-Sun Hwang,Jeong-Ik Lee,Sung Mook Chung,Yong Suk Yang,Lee-Mi Do,Hye Yong Chu +6 more
TL;DR: In this article, a 2.15 inch AM-OLED panel composed of 176 × 144 (106 dpi) transparent pixels driven by ZnO-TFT was fabricated.
Journal ArticleDOI
High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method
Shun Han,S.M. Liu,Youming Lu,Peijiang Cao,Wenjun Liu,Y. X. Zeng,Fang Jia,Xinke Liu,Deliang Zhu +8 more
TL;DR: In this article, a mixed-phase MgZnO-based detector with (200) cubic and (hexagonal) interfaces was proposed to detect solar-blind UV signals.
Journal ArticleDOI
Ferromagnetism in Tb doped ZnO nanocrystalline films
W.Q. Zou,Chuanzhen Ge,G. Venkataiah,H. L. Su,H. L. Su,Hua-Shu Hsu,J. C. A. Huang,Xiaozhou Liu,Xiaozhou Liu,F. M. Zhang,Y. W. Du +10 more
TL;DR: In this paper, Nanocrystalline Tb-doped ZnO films have been prepared by ion-beam sputtering technique and magnetic characterization showed that the films are ferromagnetic with Curie temperature (TC) higher than room temperature.
Journal ArticleDOI
Effects of additive gases and plasma post-treatment on electrical properties and optical transmittance of ZnO thin films
TL;DR: In this paper, the effects of additive gases (such as hydrogen and oxygen) during growth and plasma treatment (using argon or hydrogen) after growth on zinc oxide (ZnO) thin film as a channel layer in an oxide thin film transistor (TFT) have been characterized.
References
More filters
Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.