Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Photosensitivity n-channel ZnO phototransistor for optoelectronic applications: Modeling of ZnO TFT
TL;DR: The zinc oxide thin film transistor can be used in visible photo-detecting device applications and a significant increase in the drain current of ZnO TFT is observed with a maximum photosensitivity of 100 under visible light illumination.
Journal ArticleDOI
Synthesis, Optical Properties, and Ethanol-Sensing Properties of Bicone-like ZnO Microcrystals via a Simple Solution Method
Qingjiang Yu,Cuiling Yu,Wuyou Fu,Mingxia Yuan,Jin Guo,Minghui Li,Shikai Liu,Guangtian Zou,Haibin Yang +8 more
TL;DR: In this paper, a large-scale uniform bicone-like ZnO microcrystals were successfully synthesized via a simple solution method at lower temperature (80 °C).
Journal ArticleDOI
Direct synthesis and characterization of optically transparent conformal zinc oxide nanocrystalline thin films by rapid thermal plasma CVD
TL;DR: X-ray diffraction indicates the grains of as-deposited ZnO to be highly textured, with the fastest growth occurring along the c-axis, and higher annealing temperatures appear to restructure the ZnNO nanocrystalline films to form nanorods of ZNO due to a combination of grain boundary diffusion and bulk diffusion.
Journal ArticleDOI
Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review
Jayapal Raja,Kyungsoo Jang,Cam Phu Thi Nguyen,Junsin Yi,Nagarajan Balaji,Shahzada Qamar Hussain,Somenath Chatterjee +6 more
TL;DR: In this paper, an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Journal ArticleDOI
Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties
TL;DR: In this article, the molecular flux of sputtered indium gallium zinc oxide (IGZO) and oxygen during IGZO growth is used to generalize the optimum synthesis conditions for thin film transistors (TFTs).
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.