Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Effect of carrier gas species and flow rates on the properties of ZnO thin films prepared by chemical vapor deposition using zinc acetate dihydrate
TL;DR: In this paper, ZnO thin films were prepared on silicon substrates by sublimation of zinc acetate dihydrate utilizing argon and oxygen as the carrier gas.
Proceedings ArticleDOI
Investigating the Stability of Thin Film Transistors with Zinc Oxide as the Channel Layer
R. B. M. Cross,M.M. De Souza +1 more
TL;DR: In this paper, the stability of thin film transistors with zinc oxide as the channel layer is investigated using gate bias stressing techniques, and it is found that the application of low positive and negative stress results in the device transfer characteristics shifting in positive or negative directions respectively.
Journal ArticleDOI
Non-parabolicity and band gap re-normalisation in Si doped ZnO
Robert E. Treharne,Laurie J. Phillips,Ken Durose,Ayendra Weerakkody,Ivona Z. Mitrovic,Steve Hall +5 more
TL;DR: In this article, a combinatorial methodology for the rapid optimisation of sputtered transparent conducting oxides was applied to Si doped ZnO. A wide range of compositions have been explored over a single sample to determine an optimum composition, with respect to the minimisation of resistivity, of x = 0.65% wt.
Journal ArticleDOI
Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO
Shigefusa F. Chichibu,Akira Uedono,Kazunobu Kojima,Kazuto Koike,Mitsuaki Yano,Shun–ichi Gonda,Shoji Ishibashi +6 more
TL;DR: In this article, the hole capture-coefficient at room temperature of major intrinsic nonradiative recombination centers (NRCs) that commonly exist in various low dislocation density n-type epitaxial films and nearly dislocation-free bulk single crystals of ZnO with and without irradiation by an 8 MeV proton beam is determined.
Journal ArticleDOI
Effect of Sol Strength on Growth, Faceting and Orientation of Sol-Gel Derived ZnO Nanostructures
TL;DR: In this paper, the authors have deposited ZnO films by sol-gel spin process and using three different concentrations of 10, 12.5, and 25% of sol using zinc acetate as the precursor material and characterized for their thickness and other associated characteristics.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.