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Journal ArticleDOI

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

P. F. Carcia, +3 more
- 10 Feb 2003 - 
- Vol. 82, Iss: 7, pp 1117-1119
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.
Abstract
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.

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Citations
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Journal ArticleDOI

Carrier Transport Mechanism and Barrier Height of B-, Al- and B-Al-Ion-Doped ZnO Film/Graphene Schottky Contacts Prepared Using the Sol–Gel Method

TL;DR: In this paper, the electrical properties of the graphene/ZnO Schottky contact incorporating an ion-doped ZnO film were investigated, where the results suggested that ion doping could effectively improve the barrier height and reduce the leakage current.
Journal ArticleDOI

Droplet-vaporization behavior during plasma-assisted mist chemical vapor deposition of zinc oxide films

TL;DR: In this article, the time required for a droplet to fully evaporate is simulated as a function of the initial droplet temperature, droplet-vapor interactions, and initial diameter.
Book ChapterDOI

Ultrathin Ferroelectric Films

TL;DR: In this paper, the Ginzburg conception of the soft mode implicates, that ferroelectric crystals and films are bulk systems, and it is shown that the soft-mode is not a soft mode, but a bulk system.
Journal ArticleDOI

Enhancement of a-IZO TTFT Performance by Using Y2O3 ∕ Al2O3 Bilayer Dielectrics

TL;DR: In this article, a comparison study was performed on radio frequency sputtered amorphous In-Zn-O transparent thin-film transistors (a-IZO TTFTs) using Y2O3 and Y 2O3/Al2O 3 dielectrics.
Journal ArticleDOI

A Facile Route to Heterostructured ZnO:S/ZnO Nanorotors: Structural and Optical Properties

TL;DR: In this article, the authors synthesized heterostructured ZnO:S/ZnO 6-fold nanorotors through a one-step catalyst-free process during chemical vapor deposition.
References
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Book

Elements of X-ray diffraction

TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.
Book

Thermodynamics of solids

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