Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Effect of Channel Scaling on Zinc Oxide Thin-Film Transistor Prepared by Atomic Layer Deposition
TL;DR: In this paper, different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition.
Journal ArticleDOI
Photoconductive and photovoltaic evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon by reactive pulsed laser ablation
TL;DR: In this article, 2 O 3 and SnO 2 multilayered semiconducting thin-films have been deposited on Si substrates by reactive pulsed laser ablation (RPLA), with the aim of evaluating their photoconductive and photovoltaic properties.
Journal ArticleDOI
Tuning electronic transport of ZnO micro/nanowires by a transverse electric field
TL;DR: In this paper, the diameter effect on the electron mobility was measured for individual ZnO micro/nanowires by applying a transverse electric field, and a minimum conductivity was obtained in the negative electric field.
DissertationDOI
High-performance zinc oxide thin-film transistors for large area electronics
TL;DR: A review of the recent progress in the field of oxide semiconductor electronics with particular emphasis on materials and TFT performance can be found in this paper, where the charge carrier mobilities of state-of-the-art ZnO TFTs now exceed those obtained from mainstream technologies such as hydrogenated amorphous silicon (a-Si:H) transistors.
Journal ArticleDOI
Microstructure and piezoelectric properties of hexagonal MgxZn1-xO/ZnO films at lower Mg compositions
TL;DR: In this article, the authors investigate the piezoelectric coefficient (d33) of MgxZn1−xO and Mg xZn 1 −xO/ZnO films with the variation of the Mg concentration.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.