Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Device performance and density of trap states of organic and inorganic field-effect transistors
Roger Häusermann,Roger Häusermann,Kristin Willa,Balthasar Blülle,Tobias Morf,Antonio Facchetti,Zhihua Chen,Jiyoul Lee,Bertram Batlogg +8 more
TL;DR: In this paper, the free vs. total charge carrier density in field effect transistors (FETs) and trap states (trap DOS) in a semiconductor is quantified through full normalization of the transfer curve.
Journal ArticleDOI
Effect of substrate-induced strain on the morphological, electrical, optical and photoconductive properties of RF magnetron sputtered ZnO thin films
TL;DR: In this article, the effect of substrate-induced strain along c-axis on the structural, electrical, optical and photoconducting properties of the films was studied. And the change in resistivity and carrier concentration has been related to the variation of strain.
Journal ArticleDOI
A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3 Heterostructure Formed on a Silicon Substrate
TL;DR: In this article, the authors developed a ferroelectric gate field effect transistor (FeFET) with a stacked oxide structure of ZnO/Pb(Zr,Ti)O3 (PZT)/SrRuO3(SRO) on a Pt/SiO2-coated silicon substrate.
Journal ArticleDOI
Effect of annealing temperature on the performance of photoconductive ultraviolet detectors based on ZnO thin films
TL;DR: In this article, X-ray diffraction (XRD) patterns showed ZnO films present hexagonal wurtzite structure with a preferential orientation of (002) plane, and the crystallite size of films gradually increased from 44.3 to 54.8 nm as the annealing temperature increased from 400 to 600 nm.
Journal ArticleDOI
Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics
TL;DR: The bias stability of zinc-tin-oxide (ZTO) thin-film transistors (TFTs) with either Al2O3 gate dielectrics deposited via atomic layer deposition (ALD) or SiO2-gate dielectric deposited via plasmaenhanced chemical vapor deposition (PECVD) was compared in this article.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.