Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
Recent Advances in Semiconductor Performance and Printing Processes for Organic Transistor-Based Electronics
TL;DR: The past two years have been a time of dramatic growth in the field of organic and printable electronics as discussed by the authors, and this review summarizes the most recent advances in the design, application, and understandability of these technologies.
Journal ArticleDOI
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
Sanghyun Ju,Antonio Facchetti,Yi Xuan,Jun Liu,Fumiaki Ishikawa,Peide D. Ye,Chongwu Zhou,Tobin J. Marks,David B. Janes +8 more
TL;DR: Half transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency are reported.
Journal ArticleDOI
Recent Developments in p-Type Oxide Semiconductor Materials and Devices.
TL;DR: P-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market, and recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
Journal ArticleDOI
Metal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti,Niko Munzenrieder,Niko Munzenrieder,Christian Vogt,Hendrik Faber,Lars Büthe,Giuseppe Cantarella,Francesca Bottacchi,Thomas D. Anthopoulos,Gerhard Tröster +9 more
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Journal ArticleDOI
Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods.
Baoquan Sun,Henning Sirringhaus +1 more
TL;DR: By controlling the shape of the nanocrystals from spheres to rods the semiconducting properties of spin-coated ZnO films can be much improved as a result of increasing particle size and self-alignment of thenanorods along the substrate.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.