Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Journal ArticleDOI
The first-principles study of electronic structures, magnetic and optical properties for Ce-doped ZnO
Fuchun Zhang,Quan Gan,Meiru Yan,Cui Hongwei,Haijuan Zhang,Dandan Chao,Jie Guo,Guohao Quan,Weihu Zhang +8 more
TL;DR: In this article, the first principles of local spin density approximation based on the density function theory (DFT) were studied for the electronic structures, magnetic and optical properties of Ce-doped ZnO.
Dissertation
Structural, electrical and optical properties of transparent conducting Si-doped ZnO thin films grown by pulsed laser deposition
TL;DR: In this article, thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon.
Journal ArticleDOI
Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures.
TL;DR: In this article, a bottom-gate structure TFT was fabricated using ferroelectric Pb(Zr, Ti)O3 (PZT) film as a gate insulator and indium tin oxide (ITO) as a channel material.
Journal ArticleDOI
Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films
TL;DR: The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated in this article, where diethylzinc and deionized water were used as metal precursor and reactant, respectively.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.