Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TLDR
In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.Abstract:
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.read more
Citations
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Proceedings ArticleDOI
Sputter coated nanocrystalline ZnO for fabrication of thin film transistors
TL;DR: In this paper, a zinc oxide-based thin-film transistors (ZnO-TFT) was found to operate with a threshold voltage of 12.075 V, channel mobility of 110.44 cm2/Vs, and an on/off ratio of approximately 105.
Journal ArticleDOI
The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors
TL;DR: In this paper, a gate-down thin film transistor device was fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (3x1017/cm3) for the channel material and a-IZO with high carrier concentration (~2×1020/cm 3) for source-drain metallization, and the TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide.
Journal ArticleDOI
Surface properties and the related stress in Ga-doped ZnO thin films: a grayscale fractal study
Chenlei Jing,Wu Tang +1 more
TL;DR: In this article, the structural information and surface morphologies were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), which could offer full perspectives about the cluster change (like cluster size, cluster amount, cluster height, and so forth) of GZO films with different annealing temperatures.
Book ChapterDOI
ZnO/Pb(Zr,Ti)O3 Gate Structure Ferroelectric FETs
TL;DR: In this paper, the authors developed a ferroelectric-gate field effect transistor (FeFET) composed of heteroepitaxially stacked oxide materials, and demonstrated a 60-nm-channel-length FeFET.
Journal ArticleDOI
High-mobility Nanocrystalline Indium Oxide TFTs with Silicon Nitride Gate Dielectric
TL;DR: In this article, the authors reported on room-temperature deposition of indium oxide thin films by reactive ion beam assisted evaporation (IBAE) and their application to TFTs.
References
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Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.