Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Distance detecting apparatus for a vehicle

Abstract: A distance detecting apparatus can not only measure the distance to a target preceding vehicle but also detect obstacles such as an intervening vehicle, other vehicles running around or adjacent the target vehicle without any movement of the apparatus itself. The apparatus includes a window setting device (13) for setting a plurality of distance-measuring windows (21 through 25) on a screen (20) on the basis of one of two image signals generated by a pair of video cameras (5, 6), a switch (14) for setting an image-following window (26) enclosing the preceding vehicle to be followed, and a CPU (12) for measuring the distance to an object in each distance-measuring window as well as the distance to an object in the image-following window.

Novel 2,1,3-benzothiadiazole-based red-fluorescent dyes with enhanced two-photon absorption cross-sections.

Abstract: This paper reports the two-photon absorbing and orange-red fluorescence emitting properties of a series of new 2,1,3-benzothiadiazole (BTD)-based D-pi-A-pi-D-type and star-burst-type fluorescent dyes. In the D-pi-A-pi-D-type dyes 1-6, a central BTD core was connected with two terminal N,N-disubstituted amino groups via various pi-conjugated spacers. The star-burst-type dyes 8 and 10 have a three-branched structure composed of a central core (benzene core in 8 and triphenylamine core in 10) and three triphenylamine-containing BTD branches. All the BTD-based dyes displayed intense orange-red color fluorescence in a region of 550-689 nm, which was obtained by single-photon excitation with good fluorescent quantum yield up to 0.98 as well as by two-photon excitation. Large two-photon absorption (TPA) cross-sections (110-800 GM) of these BTD dyes were evaluated by open aperture Z-scan technique with a femtosecond Ti/sapphire laser. The TPA cross-sections of D-pi-A-pi-D-type dyes 2-6 with a benzene, thiophene, ethene, ethyne, and styrene moiety, respectively, as an additional pi-conjugated spacer are about 1.5-2.5 times larger than that of 1c with only a benzene spacer. The TPA cross-sections significantly increased in three-branched star-burst-type BTDs 8 (780 GM) with a benzene core and 10 (800 GM) with a triphenylamine core, which are about 3-5 times larger than those of the corresponding one-dimensional sub-units 9 (170 GM) and 11 (230 GM), respectively. The ratios of sigma/e(pi) between three-branched and one-dimensional dyes were 6.5:3.8 (for 8 and 9) and 6.0:4.0 (for 10 and 11), which are larger than those predicted simply on the basis of the chromophore number density (1:1), according to a cooperative enhancement of the two-photon absorbing nature in the three-branched system.

Text search system for locating on the basis of keyword matching and keyword relationship matching

Abstract: A text information extraction device extracts analysis networks from texts and stores them in a database. The analysis networks consist of lines each including elements and relations extracted from the texts. The analysis networks are complemented via synonym/near synonym/thesaurus process and via complementary template and the lines thereof are weighted via concept template. A text similarity matching device judges similarity of input and database analysis networks on the basis of agreements of words, word pairs, and lines. A text search system stores texts and complementary term lists prepared therefrom in respective databases. Queries are inputted in the form of analysis networks from which sets of keywords and relations are extracted. After searching the texts and complementary term lists stored in databases with respect to the keywords extracted from each input query, agreements of the sets of keywords and relations are determined.

Novel locally strained channel technique for high performance 55nm CMOS

Abstract: A novel local strained channel (LSC) MOSFET has been fabricated by a stress control technique utilizing a strained poly silicon gate electrode The residual compressive stress in arsenic (As) implanted polysilicon is induced by high temperature annealing of CVD SiO/sub 2/ cap with high tensile stress On the other hand, boron (B) implanted poly silicon is free from stress As a result, the only n-channel region is locally strained by the strained polysilicon electrode The drain current of LSC nFETs is improved 15% compared to that of the conventional nFET without the degradation of pFET drain current High performance 55nm CMOSFET is realized by simple process for LSC-structure