Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

A method for finding a pair of multiple load flow solutions in bulk power systems

Abstract: The authors discovered that the convergent characteristic of load flow calculation by the Newton-Raphson method in rectangular coordinates has a unique linearity. It tends to converge straight toward two multiple solutions when they are located close to each other. On the basis of this feature, the authors propose a method for solving two close solutions in bulk power systems. The results of applying this method to a heavily loaded practical 233-bus system and the Klos-Kerner 11-bus system verify its robustness and ability to find solutions successfully and quickly. The proposed method is so fast that it can be applied to an online voltage security system. >

Duct type multizone air conditioning system

Abstract: An air duct type multizone air conditioning system having air dampers and corresponding thermostats in respective zones under the control of a main controller. The main controller can override desired temperatures selected by the corresponding thermostats in any of the zones and automatically detects the number of the number of zones, the presence of an auxiliary heater, and a heat pump, and the presence of an air damper and corresponding thermostat properly located in the same zone. The main controller also receives information regarding the operating cost of the heat pump and the auxiliary heater to ensure their cost-effective use.

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Abstract: Ultraviolet (UV) light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a patterned sapphire substrate (PSS) using a single growth process of metalorganic vapor phase epitaxy. The GaN layer grown by lateral epitaxy on a patterned substrate (LEPS) has a dislocation density of 1.5 x 10 8 cm -2 . The LEPS-UV-LED chips were mounted on the Si bases in a flip-chip bonding arrangement. When the UV-LED was operated at a forward-biased current of 20 mA at room temperature, the emission wavelength, the output power and the external quantum efficiency were estimated to be 382 nm, 15.6 mW and 24%, respectively. With increasing forward-biased current, the output power increased linearly and was estimated to be approximately 38 mW at 50 mA.