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Institution

Mitsubishi Electric

CompanyRatingen, Germany
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors investigated the combination with a wavelength conversion film (WCF), which consists of Eu chelate particles encapsulated by the sol-gel derived silica glass.

40 citations

Journal ArticleDOI
TL;DR: In this paper, a seed layer between an n-type micro-crystalline Si layer and an intrinsic amorphous Si layer was introduced to improve the crystallinity of the Si layer.
Abstract: We have developed highly crystallized n-type microcrystalline Si layers as window layers for rear emitter Si heterojunction solar cells. We introduce a seed layer between an n-type microcrystalline Si layer and an intrinsic amorphous Si layer to improve the crystallinity of the n-type microcrystalline Si layer. By using this stacked layer instead of an n-type amorphous Si layer, the contact resistance between the n-type thin layer and In2O3:H is reduced without Al-doped ZnO. As a result, we obtain a high short-circuit current and a high fill factor simultaneously, and achieve a solar cell efficiency of 23.43%.

40 citations

Patent
04 Mar 2009
TL;DR: In this paper, a silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gateto-drain capacitance achieved in an activated state and gate-to drain capacitance achieving in a deactivated state is presented.
Abstract: A silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gate-to-drain capacitance achieved in an activated state and gate-to-drain capacitance achieved in a deactivated state. A silicon carbide drift layer of a first conductivity type is provided on a silicon carbide substrate of a first conductivity type; a pair of base regions are provided in a surface layer portion of the silicon carbide drift layer and exhibit a second conductivity type; a pair of source regions are provided in interiors of surface layer portions of the pair of base regions and exhibit a first conductivity type; and semi-insulating regions are provided between the silicon carbide substrate and the pair of base regions.

40 citations

Book ChapterDOI
01 Jan 2012
TL;DR: A sublinear Fourier sampling algorithm for a case of sparse offgrid frequency recovery and a sublinear time randomized algorithm which takes O(k log k log(1/ )(log k + log(‖a‖1/‖ν‷1))) samples of f (t) and runs in time
Abstract: We design a sublinear Fourier sampling algorithm for a case of sparse off-grid frequency recovery. These are signals with the form $$f(t) = \sum _{j=1}^k a_j \mathrm{e}^{i\omega _j t} + \int u (\omega )\mathrm{e}^{i\omega t}d\mu (\omega )$$f(t)=?j=1kajei?jt+??(?)ei?tdμ(?); i.e., exponential polynomials with a noise term. The frequencies $$\{\omega _j\}$${?j} satisfy $$\omega _j\in [\eta ,2\pi -\eta ]$$?j?[?,2?-?] and $$\min _{i e j} |\omega _i-\omega _j|\ge \eta $$mini?j|?i-?j|?? for some $$\eta > 0$$?>0. We design a sublinear time randomized algorithm which, for any $$\epsilon \in (0,\eta /k]$$∈?(0,?/k], which takes $$O(k\log k\log (1/\epsilon )(\log k+\log (\Vert a\Vert _1/\Vert u \Vert _1))$$O(klogklog(1/∈)(logk+log(?a?1/???1)) samples of $$f(t)$$f(t) and runs in time proportional to number of samples, recovering $$\omega _j'\approx \omega _j$$?j???j and $$a_j'\approx a_j$$aj??aj such that, with probability $$\varOmega (1)$$Ω(1), the approximation error satisfies $$|\omega _j'-\omega _j|\le \epsilon $$|?j?-?j|≤∈ and $$|a_j-a_j'|\le \Vert u \Vert _1/k$$|aj-aj?|≤???1/k for all $$j$$j with $$|a_j|\ge \Vert u \Vert _1/k$$|aj|????1/k. We apply our model and algorithm to bearing estimation or source localization and discuss their implications for receiver array processing.

40 citations

Journal ArticleDOI
01 May 2003
TL;DR: The proposed Motion Picture Response Time measurement is designed to represent and quantify the visual perception of moving images across an AM-LCD screen and incorporates the synchronously moving test pattern and the evaluation of the pattern edge brightness changes.
Abstract: The proposed Motion Picture Response Time (MPRT) measurement is designed to represent and quantify the visual perception of moving images across an AM-LCD screen MPRT measurement method takes into account three basic LCD panel characteristics: the capacitive-hold-type brightness variations, brightness level dependent transition times and a liquid crystal response time Further, MPRT figure is affected by a back light control method and video signal processing algorithms The proposed measurement method incorporates the synchronously moving test pattern and the evaluation of the pattern edge brightness changes

40 citations


Authors

Showing all 23025 results

NameH-indexPapersCitations
Ron Kikinis12668463398
William T. Freeman11343269007
Takashi Saito112104152937
Andreas F. Molisch9677747530
Markus Gross9158832881
Michael Wooldridge8754350675
Ramesh Raskar8667030675
Dan Roth8552328166
Joseph Katz8169127793
James S. Harris80115228467
Michael Mitzenmacher7942236300
Hanspeter Pfister7946623935
Dustin Anderson7860728052
Takashi Hashimoto7398324644
Masaaki Tanaka7186022443
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20224
2021327
20201,060
20191,605
20181,517
20171,090