Institution
Mitsubishi Electric
Company•Ratingen, Germany•
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..
Topics: Signal, Voltage, Layer (electronics), Terminal (electronics), Electrode
Papers published on a yearly basis
Papers
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TL;DR: In this article, the authors investigated the combination with a wavelength conversion film (WCF), which consists of Eu chelate particles encapsulated by the sol-gel derived silica glass.
40 citations
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TL;DR: In this paper, a seed layer between an n-type micro-crystalline Si layer and an intrinsic amorphous Si layer was introduced to improve the crystallinity of the Si layer.
Abstract: We have developed highly crystallized n-type microcrystalline Si layers as window layers for rear emitter Si heterojunction solar cells. We introduce a seed layer between an n-type microcrystalline Si layer and an intrinsic amorphous Si layer to improve the crystallinity of the n-type microcrystalline Si layer. By using this stacked layer instead of an n-type amorphous Si layer, the contact resistance between the n-type thin layer and In2O3:H is reduced without Al-doped ZnO. As a result, we obtain a high short-circuit current and a high fill factor simultaneously, and achieve a solar cell efficiency of 23.43%.
40 citations
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04 Mar 2009TL;DR: In this paper, a silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gateto-drain capacitance achieved in an activated state and gate-to drain capacitance achieving in a deactivated state is presented.
Abstract: A silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gate-to-drain capacitance achieved in an activated state and gate-to-drain capacitance achieved in a deactivated state. A silicon carbide drift layer of a first conductivity type is provided on a silicon carbide substrate of a first conductivity type; a pair of base regions are provided in a surface layer portion of the silicon carbide drift layer and exhibit a second conductivity type; a pair of source regions are provided in interiors of surface layer portions of the pair of base regions and exhibit a first conductivity type; and semi-insulating regions are provided between the silicon carbide substrate and the pair of base regions.
40 citations
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01 Jan 2012TL;DR: A sublinear Fourier sampling algorithm for a case of sparse offgrid frequency recovery and a sublinear time randomized algorithm which takes O(k log k log(1/ )(log k + log(‖a‖1/‖ν‷1))) samples of f (t) and runs in time
Abstract: We design a sublinear Fourier sampling algorithm for a case of sparse off-grid frequency recovery. These are signals with the form $$f(t) = \sum _{j=1}^k a_j \mathrm{e}^{i\omega _j t} + \int
u (\omega )\mathrm{e}^{i\omega t}d\mu (\omega )$$f(t)=?j=1kajei?jt+??(?)ei?tdμ(?); i.e., exponential polynomials with a noise term. The frequencies $$\{\omega _j\}$${?j} satisfy $$\omega _j\in [\eta ,2\pi -\eta ]$$?j?[?,2?-?] and $$\min _{i
e j} |\omega _i-\omega _j|\ge \eta $$mini?j|?i-?j|?? for some $$\eta > 0$$?>0. We design a sublinear time randomized algorithm which, for any $$\epsilon \in (0,\eta /k]$$∈?(0,?/k], which takes $$O(k\log k\log (1/\epsilon )(\log k+\log (\Vert a\Vert _1/\Vert
u \Vert _1))$$O(klogklog(1/∈)(logk+log(?a?1/???1)) samples of $$f(t)$$f(t) and runs in time proportional to number of samples, recovering $$\omega _j'\approx \omega _j$$?j???j and $$a_j'\approx a_j$$aj??aj such that, with probability $$\varOmega (1)$$Ω(1), the approximation error satisfies $$|\omega _j'-\omega _j|\le \epsilon $$|?j?-?j|≤∈ and $$|a_j-a_j'|\le \Vert
u \Vert _1/k$$|aj-aj?|≤???1/k for all $$j$$j with $$|a_j|\ge \Vert
u \Vert _1/k$$|aj|????1/k. We apply our model and algorithm to bearing estimation or source localization and discuss their implications for receiver array processing.
40 citations
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01 May 2003TL;DR: The proposed Motion Picture Response Time measurement is designed to represent and quantify the visual perception of moving images across an AM-LCD screen and incorporates the synchronously moving test pattern and the evaluation of the pattern edge brightness changes.
Abstract: The proposed Motion Picture Response Time (MPRT) measurement is designed to represent and quantify the visual perception of moving images across an AM-LCD screen MPRT measurement method takes into account three basic LCD panel characteristics: the capacitive-hold-type brightness variations, brightness level dependent transition times and a liquid crystal response time Further, MPRT figure is affected by a back light control method and video signal processing algorithms The proposed measurement method incorporates the synchronously moving test pattern and the evaluation of the pattern edge brightness changes
40 citations
Authors
Showing all 23025 results
Name | H-index | Papers | Citations |
---|---|---|---|
Ron Kikinis | 126 | 684 | 63398 |
William T. Freeman | 113 | 432 | 69007 |
Takashi Saito | 112 | 1041 | 52937 |
Andreas F. Molisch | 96 | 777 | 47530 |
Markus Gross | 91 | 588 | 32881 |
Michael Wooldridge | 87 | 543 | 50675 |
Ramesh Raskar | 86 | 670 | 30675 |
Dan Roth | 85 | 523 | 28166 |
Joseph Katz | 81 | 691 | 27793 |
James S. Harris | 80 | 1152 | 28467 |
Michael Mitzenmacher | 79 | 422 | 36300 |
Hanspeter Pfister | 79 | 466 | 23935 |
Dustin Anderson | 78 | 607 | 28052 |
Takashi Hashimoto | 73 | 983 | 24644 |
Masaaki Tanaka | 71 | 860 | 22443 |