Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

Light source device

Abstract: Included are, a module fixing body having a plurality of mounting holes into which laser modules are fitted and accommodated, respectively; an electricity-supplying member having an end provided with electricity-supplying terminals, which are connected to electricity-receiving terminals of the laser module accommodated in the mounting hole; and a cooling member that cools each of the laser modules. A groove in which the electricity-supplying member is accommodated is formed in a surface of the module fixing body, and the cooling member is closely arranged on the surface of the module fixing body.

A new automatic exposure system for digital still cameras

Abstract: This paper presents a newly developed automatic exposure (AE) system for digital still cameras (DSC). The through the lens (TTL) system which has been employed mainly by conventional camcorders has been applied as an exposure control system for DSCs. However, the TTL system requires a longer time to obtain an appropriate exposure value, and it is therefore not a suitable control method for DSCs which demand immediate imaging after the shutter button is pushed. The authors have developed a high-precision AE capable of controlling the exposure quickly by converting the brightness of an object directly using the obtained value of an integrated image without using the photometric sensors other than a charge coupled device (CCD). They have also confirmed that the new system enables excellent exposure control without any problem.

Y-Ba-Cu-O Superconducting Films with High Jc Values by MOCVD using Ba-Addition Products

Abstract: Y-Ba-Cu-O superconducting films having high Jc of 6.3×106 A/cm2 at 77 K and Tc of 92 K were prepared by metalorganic chemical vapor deposition using a new transport technique with Ba-addition products. This CVD method could realize stable vaporization and smooth transportation of Ba source material due to the increase of the evaporation rate at low sublimation temperatures. Consequently, good reproducibility for preparation of the high Jc films (over 106 A/cm2) was achieved.

Image display apparatus and method

Abstract: A 3D video system is disclosed The 3D video system includes a frame rate converter that stores an input video signal in a rate conversion frame memory included in the frame rate converter, then reads and outputs the input video signal at a doubled clock rate, a signal format converter that converts a pixel sequence of the video signal output from the frame rate converter and outputs the converted video signal, a controller that outputs a timing signal based on the converted video signal, 3D glasses that transmit light alternately to left and right eyes, and switch the transmission of the light to the left and right eyes, based on the converted video signal and the outputted timing signal, and a spatial modulator that spatially modulates light emitted from a light source, based on the converted video signal The 3D video system enables the modulated light to be viewed stereoscopically

Synchronous semiconductor memory device and synchronous memory module

Abstract: A first clock signal for controlling the inputting of an external signal and for controlling internal operation and a second clock signal for controlling data output are applied to separate clock input nodes, respectively. Data output timing with respect to the first clock signal can be adjusted and thus clock access time and data hold time can be adjusted. Internal data read path is pipelined to include a first transfer gate responsive to the first clock signal for transferring internal read data and a second transfer gate responsive to the second clock signal for transferring the internal read data from the first transfer gate for external outputting through an output buffer. A synchronous semiconductor memory device is provided capable of setting clock access time and data hold time at the optimal values depending on the application and of reducing the clock access time.