Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch

Abstract: This paper describes the design and experimental results of a 1.8-V single-chip CMOS MMIC front-end for 2.4-GHz band short-range wireless communications, such as Bluetooth and wireless LANs. The IC consists of fundamental RF building circuits-a power amplifier (PA), a low-noise amplifier (LNA), and a transmit/receive-antenna switch (SW), including almost all on-chip matching elements. The IC was fabricated using a 0.18-/spl mu/m standard bulk CMOS technology which has no extra processing steps to enhance the RF performances. Two new circuit-design techniques are introduced in the IC in order to minimize the insertion loss of the SW and realize a higher gain for the PA and LNA despite the utilization of the standard bulk CMOS technology. The first is the derivation of an optimum gate width of the SW to minimize the insertion loss based on small-signal equivalent circuit analysis. The other is the revelation of the advantages of interdigitated capacitors (IDCs) over conventional polysilicon to polysilicon capacitors and the successful use of the IDCs in the LNA and PA. The IC achieves the following sufficient characteristics for practical wireless terminals at 2.1 GHz and 1.8 V: a 5-dBm transmit power at a -1-dB gain compression, a 19-dB gain, an 18-mA current for the PA, a 1.5-dB insertion loss, more than 24-dB isolation, an 11-dBm power handling capability for the SW, a 7.5-dB gain, a 4.5-dB noise figure, and an 8-mA current for the LNA.

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology

Abstract: For future ULSI DRAMs beyond the 256 Mb generation, several circuit techniques and memory cell structures have been proposed to meet the requirement of high performance at low voltage. These solutions frequently involve complicated processing steps and/or the ultimate limitations of current Si-MOS devices. DRAM on silicon on insulator (SOI) substrate is a more simple solution to the problem. Thin-film SOI structures with isolation by implanted oxygen (SIMOX) process are under investigation for SRAM and logic. A SOI-DRAM test device with 100 nm thick SOI film has been fabricated in 0.5 /spl mu/m CMOS/SIMOX technology. With this 64 kb SOI-DRAM the bit-line to memory cell capacitance ratio Cb/Cs is reduced by 25% compared with the reference bulk-Si DRAM, because of the decreased junction capacitance. RAS access time tRAC is 70 ns at 2.7 VVcc, as fast as the equivalent bulk-Si device at 4 VVcc. The clock timing in this DRAM is not optimized, so access time should improve with well-tuned clocks. The boosted-level generator with body-contact structure enhances the upper Vcc margin and the reduced body-effect of sense-amplifier transistors improves the lower Vcc margin. The SOI-DRAM has an operating Vcc range from 2.3 V to 4.0 V. >

Mobile communication system and mobile terminal

Abstract: A mobile terminal (3) judges whether or not the mobile terminal is able to make a transition to a DTX period during Active, and, when judging that the mobile terminal is able to make a transition to a DTX period during Active, notifies a base station (2) to that effect. If the base station (2) judges that the mobile terminal is able to make a transition to a DRX period during Active when triggered by the notification from the mobile terminal (3), the base station (2) temporarily stops supply of electric power to the data transmission processing units and the data reception processing units of the mobile terminal (3).

Method and system for processing multiview videos for view synthesis using side information

Abstract: A method processes a multiview videos of a scene, in which each video is acquired by a corresponding camera arranged at a particular pose, and in which a view of each camera overlaps with the view of at least one other camera. Side information for synthesizing a particular view of the multiview video is obtained in either an encoder or decoder. A synthesized multiview video is synthesized from the of multiview videos and the side information. A reference picture list is maintained for each current frame of each of the multiview videos, the reference picture indexes temporal reference pictures and spatial reference pictures of the acquired multiview videos and the synthesized reference pictures of the synthesized multiview video. Each current frame of the multiview videos is predicted according to reference pictures indexed by the associated reference picture list.

Measurements of reflection and transmission characteristics of interior structures of office building in the 60-GHz band

Abstract: We have measured (at 57.5 GHz) the reflection and transmission coefficients of typical walls, floor, ceiling, window, and partitions and have compared the measured reflection characteristics with the reflection characteristics estimated by multilayer dielectric models. Although the positional inhomogeneity of structures gives rise to some variation from one measured position to another, these positional variabilities are not large. The overall trend of reflection coefficients calculated by multilayer dielectric models thus agrees fairly well with the trend of the measurements. We have shown that the use of circular polarization can reduce the reflection even if the interior parts of the structure have complicated structures. In addition, the shadowing effects of several types of partitions were measured. The transmission coefficients of partitions depend on the materials. The transmission losses of plywood-made partitions are found to be fairly low.