Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Abstract: For higher-voltage SiC modules, larger SBD chips are required as free-wheel diodes to suppress current conduction of the body diodes of MOSFETs, which causes bipolar degradation following the expansion of stacking faults. By embedding an SBD into each unit cell of a 6.5 kV SiC-MOSFET, we achieved, without using external SBDs, a high-voltage switching device that is free from bipolar degradation. Expansion of the active area by embedding SBDs is only 10% or less, whereas the active area of external SBDs can be over three times larger than that of the coupled MOSFET. The fabricated 6.5 kV SBD-embedded SiC-MOSFETs show sufficiently high breakdown voltages, low specific on-resistances, no bipolar degradation, and good reliability.

Dual-band-rejection filter for distortion reduction in RF transmitters

Abstract: A novel concept of dual-band-rejection filter (DBRF) is proposed with its circuit synthesis procedure and examples of its realization with dielectric resonators and microstrip resonators. A DBRF can make two closely spaced rejection bands and a passband between them, with lower loss than a bandpass filter having the same number of resonators and the same frequency selectivity just around the passband. The DBRF can be synthesized by applying novel frequency-variable transformations to a prototype LPF, and its physical size can be smaller than a simple cascade of two conventional band-rejection filters with different rejection bands. The DBRF can be especially applicable to distortion reduction filter in RF transmitters.

Noncontact IC card

Abstract: A noncontact IC which transmits and receives data to and from a host computer using RF signals has a buffer for storing received data temporarily and a control circuit for controlling operation of the buffer main memory thereof, wherein the control circuit starts processing data stored in the buffer only when no further data is input after a predetermined data receiving time period has elapsed from the latest data input to the buffer.

Phase-shift mask pattern accuracy requirements and inspection technology

Abstract: Computer simulations and i-line phase shift lithography experiments with programmed 5X phase shift reticle defects were used to investigate the effect of opaque and phase-shift layer defects on sub-half-micron lines. Both the simulations and the experiments show that defects in the phase shift layer print larger than corresponding opaque defects, with 0.3-0.4 micrometers defects affecting sub-half-micron critical dimensions by more than the allowable 10%. Inspection of programmed phase shift defects with a prototype mask inspection system confirmed that the system finds the 0.3-0.4 micrometers phase shift defects critical to sub-half-micron lithography.