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Institution

Mitsubishi Electric

CompanyRatingen, Germany
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..


Papers
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Patent
27 May 2013
TL;DR: In this paper, the authors provided an intra predictor that when a flag based on information showing whether or not field encoding is performed is valid, in case of a horizontal prediction, does not perform a filtering process on a prediction block at a time of performing an intra prediction process according to the horizontal prediction.
Abstract: There is a problem that when performing field encoding on an interlaced signal, the space resolution in a vertical direction is reduced to one half and the correlation between pixels degrades, and, as a result, the prediction efficiency of intra prediction and the coding efficiency of orthogonal transformation coefficients degrade. In accordance with the present invention, there is provided an intra predictor that when a flag based on information showing whether or not field encoding is performed is valid, in case of a horizontal prediction, does not perform a filtering process on a prediction block at a time of performing an intra prediction process according to the horizontal prediction, but in case of a mean value prediction, performs a filtering process only on the left edge of the prediction block at a time of performing an intra prediction process according to the mean value prediction.

101 citations

Journal ArticleDOI
H. Namizaki1
TL;DR: The transverse junction strip (TJS) as mentioned in this paper is a GaAs p-n homojunction sandwiched between GaAlAs layers, and it is possible to operate the TJS continuously at room temperature below 100 mA.
Abstract: A new semiconductor laser structure named the transverse-junction-stripe (TJS) laser, in which the active region is a GaAs p-n homojunction sandwiched between GaAlAs layers, has been developed. It is possible to operate the laser continuously at room temperature below 100 mA. The minimum threshold current is 34 and 50 mA in pulsed and continuous operation, respectively. Relatively high efficiencies have been obtained, comparable to those of conventional double-heterostructure (DH) lasers. The transverse mode is fundamental in both directions and is almost independent of input current up to three times the threshold current. The longitudinal mode stays nearly single over a wide range of input current. The TE/TM power ratio exceeds 100 at 1.5 times the threshold current.

101 citations

Patent
20 Feb 2002
TL;DR: In this article, a mobile body network as a sub-net constituting a composite IP network comprises a home agent server managing identifiers of a plurality of mobile terminals subscribed in this mobile body networks, and an IP tunnel router.
Abstract: A mobile body network as a sub-net constituting a composite IP network comprises a home agent server managing identifiers of a plurality of mobile terminals subscribed in this mobile body network, and a plurality of IP tunnel routers. When a mobile terminal has moved to another sub-net constituting the composite IP network, the home agent server accepts from the mobile terminal, transmission destination information required for transmission to the mobile terminal and delivers IP tunnel setting information specifying the mobile terminal and the transmission destination information to a plurality of IP tunnel routers. Upon reception of an IP packet to be transmitted to the mobile terminal, each of the IP tunnel routers transfers the IP packet in accordance with the IP tunnel setting information without using the home agent server.

100 citations

Journal ArticleDOI
TL;DR: An initial prototype for simulating arthroscopic knee surgery is described which uses volumetric models of the knee derived from 3-D magnetic resonance imaging, visual feedback via real-time volume and polygon rendering, and haptic feedback provided by a force-feedback device.

100 citations

Journal ArticleDOI
TL;DR: In this article, the epitaxial layers of GaAs were grown on GaAs(100) at substrate temperatures ranging from 400° to 600°C by molecular beam epitaxy.

100 citations


Authors

Showing all 23025 results

NameH-indexPapersCitations
Ron Kikinis12668463398
William T. Freeman11343269007
Takashi Saito112104152937
Andreas F. Molisch9677747530
Markus Gross9158832881
Michael Wooldridge8754350675
Ramesh Raskar8667030675
Dan Roth8552328166
Joseph Katz8169127793
James S. Harris80115228467
Michael Mitzenmacher7942236300
Hanspeter Pfister7946623935
Dustin Anderson7860728052
Takashi Hashimoto7398324644
Masaaki Tanaka7186022443
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20224
2021327
20201,060
20191,605
20181,517
20171,090