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Journal ArticleDOI

Modeling of nonlinear thermal resistance in FinFETs

TLDR
In this paper, the authors investigated the thermal resistance of FinFETs with the variation in the number of fin, shape of fin and fin pitch, and proposed a model for thermal resistance behavior correctly with N fin and F pitch variation.
Abstract
In this paper, self-consistent three-dimensional (3D) device simulations for exact analysis of thermal transport in FinFETs are performed. We analyze the temperature rise in FinFET devices with the variation in the number of fins (N fin), shape of fins and fin pitch (F pitch). We investigate that the thermal resistance R th has nonlinear dependency on N fin and F pitch. We formulate a model for thermal resistance behavior correctly with N fin and F pitch variation. The proposed formulation is implemented in industry standard Berkeley short-channel independent gate FET model for common multi-gate transistors (BSIM-CMG) and validated with both experimental data and TCAD simulations.

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Citations
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Journal ArticleDOI

Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETs

TL;DR: In this article, a new model for thermal resistance estimation in fin-shaped field effect transistors (FinFETs) and stacked-nanowire FETs was proposed.
Journal ArticleDOI

Synthesis and characterization of Ca doped ZnO thin films by sol–gel method

TL;DR: In this article, the structural changes in the molecular binding between ZnO and Ca, Fourier Transform Infrared spectroscopy (FTIR), Micro-Raman Spectroscopy and X-ray diffraction (XRD) were performed.
Journal ArticleDOI

An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs

TL;DR: In this article, 3-dimensional (3-D) electrothermal simulations using coupled hydrodynamic and thermodynamic transport models are performed to analyze the electrothermodynamic behavior and self-heating effects in ultra-thin DGAA MOSFETs.
Journal ArticleDOI

Impact of self-heating effect on the performance of hybrid FinFET

TL;DR: The impact of self-heating effect (SHE) in hybrid FinFET, which is a promising device for high-performance applications, is presented and the linear dependence of thermal resistance (Rth) on Lg, Wfin, and tbox; and nonlinear dependence on Lpitch and N is studied.
Journal ArticleDOI

Investigation of Electrothermal Behaviors of 5-nm Bulk FinFET

TL;DR: In this article, the authors analyzed the localized thermal effect caused by self-heating effect (SE) in 5-nm bulk FinFETs that are scaled down, following the International Technology Roadmap for Semiconductors.
References
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Journal ArticleDOI

A unified mobility model for device simulation—I. Model equations and concentration dependence

TL;DR: In this article, the authors presented a physics-based analytical model that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering, clustering of impurities and the full temperature dependence of both minority and majority carrier mobility.
Journal ArticleDOI

A physically based mobility model for numerical simulation of nonplanar devices

TL;DR: A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.
Journal ArticleDOI

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

TL;DR: In this article, the drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3. 102to 6. 104V/cm) at temperatures up to 430 K. The mean square deviation was in all cases less than 3.8 percent.
Journal ArticleDOI

Phonon-boundary scattering in thin silicon layers

TL;DR: The authors measured the thermal conductivity of single-crystal silicon layers in SOI substrates at temperatures between 20 and 320 K using Joule heating and electrical-resistance thermometry in microfabricated structures.
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