NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

THz optical-frequency conversion of 1 Gb/s-signals using highly nondegenerate four-wave mixing in an InGaAsP semiconductor laser

Abstract: The authors report the application of the highly nondegenerate four-wave mixing (HNDFWM) process to a 1.5- mu m InGaAsP semiconductor laser in optical-frequency conversion experiments on 1-Gb/s intensity-modulated signals in a 1-THz conversion range. This conversion is based on a subpicosecond ultrafast nonlinear gain process in the laser. The HNDFWM was generated through the use of an injection-locking technique. The possibility of applying this phenomenon to an optical fiber dispersion compensator is also discussed. >

Highly Selective and Highly Anisotropic SiO2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma

Abstract: A 10-100 μs modulated electron cyclotron resonance (ECR) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF 2 radicals to F atoms in the CHF 3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10-100 μs). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO 2 etching selectivity to Si etching and eliminates microloading effects during SiO 2 contact hole etching

Connector with less crosstalk

Abstract: A connector includes signal sockets, and ground sockets. The signal sockets and the ground sockets are made of electrically conductive material and alternately arranged in a column direction and a row direction. Each of the signal sockets includes a contact lead section for an external signal lead to be connected, and a base section connected to the contact lead section of the signal socket. Also, each of the ground sockets includes a contact lead section for an external ground lead to be connected, a first extending section extending between one of the signal sockets which is arranged adjacent to the ground socket and one of two of the signal sockets which are arranged adjacent to the ground socket obliquely from the one signal socket, and a base section connected to the contact lead section of the ground socket and the first extending section. Here, the first extending section of the ground socket shields electromagnetic wave from the one signal socket to the one of the two signal sockets.

Polyacetylene and Polynorbornene Derivatives Carrying TEMPO. Synthesis and Properties as Organic Radical Battery Materials

Abstract: 2,2,6,6-Tetramethylpiperidine 1-oxyl (TEMPO)-containing N-propargylamide HC≡CCH 2 NHCO+TEMFO (1), propargyl ester HC≡CCH 2 OCO-4-TEMPO (2), phenylacetylene derivative HC≡CC 6 H 3 -3,4-(CO 2 -4-TEMPO) 2 (3), and norbornene diester monomers, NB-2,3-exo, exo-(CH 2 OCO-4-TEMPO)2 (4), NB-2,3-endo,exo-(COO-4-TEMPO) 2 (5a), NB-2,3-endo,endo-(COO-4-TEMPO)2 (5b) (NB = norbornorbornene, TEMPO = 2,2,6,6-tetramethyl-l-piperidinyloxyl) were synthesized and polymerized with rhodium and ruthenium catalysts. Monomers 2, 5a, and 5b gave polymers with number-average molecular weights of 47000-185000 in 59-100% yields, while 1, 3, and 4 gave polymers insoluble in common organic solvents in 88-100% yields. The capacities of cells fabricated with poly(1), poly(2), and poly(3) were 67, 82, and 23 Ah · kg -1 based on the weight, respectively. The capacity of poly(5a)-based cell reached the theoretical value (109 Ah · kg -1 ) of the polymer.

Semiconductor device and method of manufacturing the same

Abstract: The method of manufacturing a semiconductor device according to the present invention includes: forming an interconnect trench in an insulating film formed on a semiconductor substrate (S 100 ) ; forming a barrier metal layer on the whole surface of the insulating film (S 102 ); forming a copper layer on the whole surface of the barrier metal layer so that the copper layer is embedded in the interconnect trench (S 104 ); removing the copper layer outside the interconnect trench by polishing under a condition that the barrier metal layer is left on the surface of the insulating film (S 106 ); selectively forming a cap metal layer on the copper layer formed in the interconnect trench after the step of removing the copper layer by polishing (S 108 ); and flattening the cap metal layer by polishing (S 110 ).