NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Semiconductor device having multilayered wiring structure with a small parasitic capacitance

Abstract: The semiconductor device of the present invention includes a semiconductor substrate on which are formed semiconductor elements, and a plurality of wiring layers formed on the semiconductor substrate via porous insulating films. The surface of the plurality of the wiring layers is preferably covered with a compact insulating film. The size of the pores in the porous insulating film is preferably 5 nm to 50 nm in diameter, and the volume of the pores in the porous insulating film is preferably 50% to 80% of the total volume of the porous insulating film. The porous insulating film is formed by subjecting a mixed insulating film of a basic oxide and an acidic oxide to a heat treatment to precipitate only either one of the basic oxide and the acidic oxide, and then dissolving out selectively the basic or acidic oxide precipitated.

Fault-tolerant computer system, re-synchronization method thereof and re-synchronization program thereof

Abstract: A lock-step synchronism fault-tolerant computer system includes a plurality of computing modules having a processor and a memory in which each computing module processes the same instruction string in synchronization with each other. When disagreement in a state of access to an external bus among the respective processors in each computing module is detected, if no fault is detected in the system including the respective computing modules, an interruption is notified to all of said processors. Synchronization among each computing module is recovered by adjusting timing of a response to an access which each processor executes by an interruption.

Nonvolatile semiconductor memory device

Abstract: A nonvolatile memory device includes a memory cell that stores data by presence or absence of electrons accumulated in a floating gate, a read reference current generator that generates a read reference current for reading data from the memory cell based on a constant current from a constant current generator included therein, and a read voltage generator that generates a read voltage to be applied to a control gate of the memory cell during data reading. The read reference current generator generates a monitor voltage that varies according to variation of the read reference current and a threshold voltage of the memory cell. The read voltage generator generates the read voltage based on the monitor voltage.